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Abstract
We report an investigation of the galvanomagnetic effects of twisting bicrystals of Bi1-xSbx
(0.07 < x < 0.15) in high (up 40T) magnetic fields, directed along the crystallite interface plane (near the
C3 axes of crystallites). It has been found that in bicrystals with small crystallite disorientation angle, the
semiconductor-semimetal transition is induced in crystallites and interface layers at different values of
magnetic field. On the other hand, in the same region of magnetic fields a semiconductor – semimetal
transitions in large disorientation angle interfaces are unlikely, but clearly manifest the quantum
oscillations of galvanomagnetic effects, denoting the high density of state in layer components of CI and
the heavier than in crystallites charge carriers.
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