ABLAȚIE LASER APLICATA PENTRU SINTEZA FILMELOR SUBȚIRI DE GaSb‹Fe› ȘI GaSb‹Mn›

Mariana OSIAC; Igor POSTOLACHI

doi:10.36120/2587-3644.v8i2.124-135

Vol 8 No 2 (2019), Статьи

Vol 8 No 2 (2019)

LASER ABLATION APPLIED FOR SYNTHESIS OF THIN FILMS GaSb‹Fe› AND GaSb‹Mn›

Статьи

https://doi.org/10.36120/2587-3644.v8i2.124-135

Published January 28, 2020

Mariana OSIAC⁺⁻
Igor POSTOLACHI⁺⁻

Mariana OSIAC

University of Craiova

Igor POSTOLACHI

Tiraspol State University

Supplementary Files

pdf (Русский)

Keywords

Gallium Antimonide (GaSb), GaSb‹Fe› and GaSb‹Mn›, laser ablation, X-ray diffraction - XRD.

How to Cite

OSIAC, M., & POSTOLACHI, I. (2020). LASER ABLATION APPLIED FOR SYNTHESIS OF THIN FILMS GaSb‹Fe› AND GaSb‹Mn›. Acta Et Commentationes Exact and Natural Sciences, 8(2), 124-135. https://doi.org/10.36120/2587-3644.v8i2.124-135

Abstract

Knowledge of the physics properties of Gallium Antimonide (GaSb) is important because of the increasing application of GaSb in many optical and electronics applications. X-ray diffraction and electron micrographic analyses showed that GaSb‹Fe› and GaSb‹Mn› eutectic composites doped with 0.1% and 2,0% Fe atoms are perfective. The density of inclusion in GaSb‹Fe› composites increased about two times than undoped samples. Iron- oped gallium antimony thin films at concentrations in the range (0.1÷2.0) atomic% were obtained by laser ablation.